वेफर बंधन

अन्य वीडियो
April 11, 2025
श्रेणी संबंध: वैज्ञानिक लैब उपकरण
संक्षिप्त: Discover the advanced Wafer Bonder Equipment designed for high-precision bonding of silicon carbide (SiC) wafers. This equipment supports room temperature and hydrophilic bonding for 4, 6, 8, and 12-inch wafers, ideal for SiC-Si and SiC-SiC applications. Perfect for power semiconductor manufacturing and research.
संबंधित उत्पाद विशेषताएं:
  • SiC वेफर्स के लिए कमरे के तापमान और हाइड्रोफिलिक बंधन तकनीकों का समर्थन करता है।
  • Compatible with 4-inch, 6-inch, 8-inch, and 12-inch wafer sizes.
  • High-accuracy optical alignment system with ≤ ±1 µm precision.
  • Adjustable bonding pressure from 0-5 MPa for optimal results.
  • Temperature range from room temp up to 400°C for pre/post treatment.
  • High vacuum chamber ensures particle-free bonding environment.
  • Touchscreen interface with programmable recipes for easy operation.
  • Optional automatic wafer loading/unloading for high-throughput production.
सामान्य प्रश्न:
  • What's the main advantage of bonding SiC at room temperature?
    It avoids thermal stress and material deformation, crucial for brittle or mismatched thermal expansion substrates like SiC.
  • Can this equipment be used for temporary bonding?
    While this unit specializes in permanent bonding, a variant with temporary bonding functionality is available upon request.
  • How do you ensure alignment for high-precision wafers?
    The system uses optical alignment with sub-micron resolution and auto-correction algorithms.
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